The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2020

Filed:

Jul. 25, 2018
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventor:

Sho Nakanishi, Ibaraki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/405 (2013.01); H01L 29/063 (2013.01); H01L 29/0696 (2013.01); H01L 29/404 (2013.01); H01L 29/7395 (2013.01); H01L 29/7805 (2013.01); H01L 29/7813 (2013.01); H01L 29/8611 (2013.01);
Abstract

The reliability of resistive field plate part-containing semiconductor device is improved. In peripheral region of semiconductor chip, the outer circumference end of internal circulation wire is separated from outer circumference end of first conductor pattern of resistive field plate part toward element region. Inner circumference end of external circulation wire is separated from inner circumference end of second conductor pattern of resistive field plate part toward outer circumference of the chip. First conductor pattern of resistive field plate part is partially extended to over thin insulation film to form first lead-out part, and internal circulation wire and first lead-out part of first conductor pattern are electrically coupled via first coupling hole. Second conductor pattern of resistive field plate part is partially extended to over thin insulation film to form second lead-out part, external circulation wire and second lead-out part of second conductor pattern are electrically coupled via second coupling hole.


Find Patent Forward Citations

Nakanishi, Sho. (2020). Semiconductor device and manufacturing method thereof (U.S. Patent No. 10680072). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10680072

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…