The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2020
Filed:
Aug. 03, 2018
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Oliver Haeberlen, St. Magdalen, AT;
Gerald Deboy, Klagenfurt, AT;
Assignee:
INFINEON TECHNOLOGIES AUSTRIA AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 29/0649 (2013.01); H01L 29/41766 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01);
Abstract
In accordance with an embodiment, a circuit includes a first gallium nitride (GaN) transistor comprising a drain coupled to a drain node, a source coupled to a source node, and a gate coupled to a gate node; and a second GaN transistor comprising a drain coupled to the drain node, a source coupled to a first power source node configured to be coupled to a first capacitor.