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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10680058 B1

PDFFull Text
Date of Patent:
Jun. 09, 2020

Filed:

Feb. 07, 2018

Semiconductor device having regions of different concentraton of lifetime killer impurity provided in a silicon carbide layer

Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Johji Nishio, Machida, JP;

Mitsuhiro Kushibe, Setagaya, JP;

Tatsuo Shimizu, Shinagawa, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Nduka E Ojeh

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/868 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/32 (2006.01); H01L 29/861 (2006.01); H01L 21/265 (2006.01); H01L 21/04 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0619 (2013.01); H01L 21/26506 (2013.01); H01L 29/0615 (2013.01); H01L 29/1608 (2013.01); H01L 29/32 (2013.01); H01L 29/6606 (2013.01); H01L 29/7395 (2013.01); H01L 29/868 (2013.01); H01L 29/8613 (2013.01); H01L 21/046 (2013.01); H01L 29/045 (2013.01);
Abstract

A semiconductor device of the embodiment includes: a first region provided in a silicon carbide layer; and a second region provided around the first region in the silicon carbide layer, the second region having a higher concentration of at least one kind of a lifetime killer impurity selected from the group consisting of B (boron), Ti (titanium), V (vanadium), He (helium) and H(proton) than a concentration of a lifetime killer impurity in the first region.

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Nishio, Johji. (2020). Semiconductor device having regions of different concentraton of lifetime killer impurity provided in a silicon carbide layer (U.S. Patent No. 10680058). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10680058

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