The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2020

Filed:

Sep. 15, 2017
Applicant:

National University Corporation Shizuoka University, Shizuoka-shi, Shizuoka, JP;

Inventor:

Shoji Kawahito, Hamamatsu, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/378 (2011.01); H04N 5/355 (2011.01); H01L 31/10 (2006.01); H04N 5/3745 (2011.01); H04N 5/353 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14643 (2013.01); H01L 27/1461 (2013.01); H01L 27/14607 (2013.01); H01L 27/14612 (2013.01); H01L 31/10 (2013.01); H04N 5/355 (2013.01); H04N 5/3535 (2013.01); H04N 5/35581 (2013.01); H04N 5/378 (2013.01); H04N 5/37452 (2013.01); H01L 27/14623 (2013.01);
Abstract

The present invention provides a photoelectric conversion element and a solid-state image sensor, having a simple structure, a wide dynamic range, a high speed and a high sensibility, which includes a principal layer of a first conductivity type, a surface-buried region of a second conductivity type, selectively buried in an upper portion of the principal layer so as to implements a photodiode with the principal layer, a first charge-accumulation region of the second conductivity type, buried in the upper portion of the principal layer configured to accumulate first signal charges transferred from the surface-buried region, generated by the photodiode, and a second charge-accumulation region of the second conductivity type, buried in the principal layer configured to accumulate second signal charges transferred from the surface-buried region, generated by the photodiode, wherein a process including a first period, in which the first signal charges are transferred from the surface-buried region to the first charge-accumulation region, and a second period shorter than the first period, in which the second signal charges are transferred from the surface-buried region to the second charge-accumulation region is repeated multiple times in one frame period.


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