The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2020

Filed:

Nov. 15, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventor:

Hoijin Lee, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/118 (2006.01); H01L 27/02 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11807 (2013.01); H01L 27/0207 (2013.01); H01L 23/5286 (2013.01); H01L 2027/11831 (2013.01); H01L 2027/11881 (2013.01);
Abstract

A semiconductor device includes: a virtual power line extended in a first direction; an n-well extended in the first direction, wherein the virtual power line and the n-well are disposed in a row; a first power gate switch cell disposed in the n-well; a second power gate switch cell disposed in the n-well, wherein the first and second power gate switch cells are first type cells; and a third power gate switch cell disposed in the n-well between the first and second power gate switch cells, wherein the third power gate switch cell is a second type cell different from the first type cells.


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