The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2020

Filed:

May. 26, 2014
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Bruno Imbert, Grenoble, FR;

Lamine Benaissa, Massy, FR;

Paul Gondcharton, Grenoble, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/18 (2006.01);
U.S. Cl.
CPC ...
H01L 24/83 (2013.01); H01L 21/187 (2013.01); H01L 2224/83203 (2013.01); H01L 2224/83895 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10335 (2013.01); H01L 2924/3511 (2013.01);
Abstract

A method for manufacturing a heterostructure, including: contacting a first substrate having a first coefficient of thermal expansion and a second substrate having a different second coefficient of thermal expansion; annealing an assembly formed by contacting the first substrate and the second substrate; after annealing, returning the assembly to room temperature; providing, before the contacting, at least one intermediate layer at a surface of at least one of the first and second substrates, the at least one intermediate layer being made of a material which is ductile during the annealing and returning to room temperature; performing the contacting with the at least one intermediate layer sandwiched between the first and the second substrates; upon returning to room temperature, applying an outer pressure to the assembly to maintain it compressed.


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