The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2020

Filed:

Jul. 31, 2018
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Kuntal Joardar, Plano, TX (US);

Min Chu, Plano, TX (US);

Vijay Krishnamurthy, Santa Clara, CA (US);

Tikno Harjono, Cupertino, CA (US);

Ankur Chauhan, Bangalore, IN;

Vinayak Hegde, Uttara Kannada, IN;

Manish Srivastava, Uttar Pradesh, IN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/00 (2006.01); H01L 23/525 (2006.01); G11C 17/16 (2006.01); H01L 27/112 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5256 (2013.01); G11C 17/16 (2013.01); H01L 27/11206 (2013.01);
Abstract

An electronic device comprises a first semiconductor die; a power transistor integrated in the first semiconductor die, the power transistor comprising a first gate, a first terminal, and a second terminal; a first sense transistor integrated in the first semiconductor die, the first sense transistor comprising a second gate and third and fourth terminals, the second gate coupled to the first gate and the fourth terminal coupled to the second terminal; a first resistor integrated in the first semiconductor die, the first resistor has a first temperature coefficient; a second sense transistor integrated in the first semiconductor die, the second sense transistor comprising a third gate and seventh and eighth terminals, the third gate coupled to the first gate and the eighth terminal coupled to the second terminal; and a second resistor integrated in the first semiconductor die, the second resistor has a second temperature coefficient.


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