The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2020
Filed:
Aug. 07, 2017
Applicant:
King Abdullah University of Science and Technology, Thuwal, SA;
Inventor:
Aftab Hussain, Thuwal, SA;
Assignee:
KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY, Thuwal, SA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/822 (2006.01); H01L 21/8238 (2006.01); H01L 27/06 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/8221 (2013.01); H01L 21/823828 (2013.01); H01L 27/0688 (2013.01); H01L 21/2007 (2013.01);
Abstract
A method for producing a semiconductor device involves forming a first transistor having a silicon substrate and a gate, and forming a second transistor, having a germanium substrate, on top of the first transistor. The second transistor is formed by forming a first gate of the second transistor on top of, and electrically coupled to, the gate of the first transistor, bonding the germanium substrate to the first gate of the second transistor so that the bonding does not damage the first transistor, and forming a second gate of the second transistor on the germanium substrate.