The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2020
Filed:
Mar. 14, 2018
Applicant:
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Inventor:
Kota Yasunishi, Kiyosu, JP;
Assignee:
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 21/3213 (2006.01); H01L 29/872 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28575 (2013.01); H01L 21/02068 (2013.01); H01L 21/32134 (2013.01); H01L 29/452 (2013.01); H01L 29/66143 (2013.01); H01L 29/66212 (2013.01); H01L 29/872 (2013.01); H01L 21/02244 (2013.01); H01L 21/02252 (2013.01); H01L 29/2003 (2013.01);
Abstract
A manufacturing method of a semiconductor device comprises forming an ohmic electrode on a surface of a semiconductor substrate, the ohmic electrode including an aluminum layer in a side opposite to a side in contact with the semiconductor substrate, performing a heat treatment on the ohmic electrode, performing an acid treatment on a surface of the aluminum layer in the ohmic electrode that has been subjected to the heat treatment and forming a wiring electrode in the side of the aluminum layer opposite to the side where the semiconductor substrate is provided after the acid treatment.