The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2020
Filed:
Dec. 29, 2016
SK Hynix Inc., Icheon, KR;
Sang-Su Park, Icheon, KR;
Hyung-Dong Lee, Icheon, KR;
SK hynix Inc., Icheon, KR;
Abstract
A neuromorphic device includes a substrate; a first electrode and a second electrode that are disposed over the substrate, extend in a first direction, and are spaced apart in a second direction; a stack structure between the first electrode and the second electrode, which includes reactive metal layers alternately stacked with one or more insulating layers; an oxygen-containing layer between the first electrode and the stack structure, which includes oxygen ions; and an oxygen diffusion-retarding layer between the stack structure and the oxygen-containing layer. The first direction is perpendicular to a top surface of the substrate, and the second direction is parallel to the top surface of the substrate. Each reactive metal layer may react with the oxygen ions to form a dielectric oxide layer. The oxygen diffusion-retarding layer interferes with a movement of the oxygen ions. A thickness of the oxygen diffusion-retarding layer varies along the first direction.