The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2020

Filed:

Sep. 19, 2017
Applicant:

Analog Devices Global Unlimited Company, Hamilton, BM;

Inventors:

David J. Clarke, Patrickswell, IE;

Stephen Denis Heffernan, County Tipperary, IE;

Alan J. O'Donnell, Castletroy, IE;

Patrick M. McGuinness, Pallaskenry, IE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/00 (2006.01); G01R 19/165 (2006.01); H01L 23/60 (2006.01); H01L 27/02 (2006.01); G01R 31/28 (2006.01); G01N 25/04 (2006.01); H01L 23/525 (2006.01); H01L 23/62 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
G01R 19/16504 (2013.01); G01N 25/04 (2013.01); G01R 31/002 (2013.01); G01R 31/2832 (2013.01); G01R 31/2856 (2013.01); H01L 23/5256 (2013.01); H01L 23/60 (2013.01); H01L 23/62 (2013.01); H01L 27/0288 (2013.01); G01R 31/2872 (2013.01); H01L 25/0657 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48145 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/1433 (2013.01); H01L 2924/19105 (2013.01);
Abstract

The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, a device configured to monitor electrical overstress (EOS) events includes a pair of spaced conductive structures configured to electrically arc in response to an EOS event, wherein the spaced conductive structures are formed of a material and have a shape such that arcing causes a detectable change in shape of the spaced conductive structures, and wherein the device is configured such that the change in shape of the spaced conductive structures is detectable to serve as an EOS monitor.


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