The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2020
Filed:
Jun. 12, 2015
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/24 (2006.01); C01B 33/029 (2006.01); H01M 4/38 (2006.01); C30B 25/00 (2006.01); C30B 29/06 (2006.01); H01G 11/30 (2013.01); C30B 11/12 (2006.01); C01B 33/027 (2006.01); C30B 29/60 (2006.01); C23C 16/01 (2006.01); C23C 16/44 (2006.01); C30B 29/62 (2006.01); H01M 10/0525 (2010.01); B82Y 40/00 (2011.01); H01M 10/052 (2010.01);
U.S. Cl.
CPC ...
C23C 16/24 (2013.01); C01B 33/027 (2013.01); C01B 33/029 (2013.01); C23C 16/01 (2013.01); C23C 16/44 (2013.01); C30B 11/12 (2013.01); C30B 25/005 (2013.01); C30B 29/06 (2013.01); C30B 29/60 (2013.01); C30B 29/62 (2013.01); H01G 11/30 (2013.01); H01M 4/386 (2013.01); H01M 10/0525 (2013.01); B82Y 40/00 (2013.01); C01P 2004/16 (2013.01); C01P 2006/40 (2013.01); H01M 10/052 (2013.01); Y02E 60/13 (2013.01);
Abstract
A method for producing a material based on silicon nanowires is provided. The method includes the steps of: i) bringing into contact, in an inert atmosphere, a sacrificial support based on a halogenide, a carbonate, a sulfate or a nitrate of an alkali metal, an alkaline earth metal or a transition metal having metal nanoparticles, with the pyrolysis vapours of a silicon source having a silane compound, by which silicon nanowires are deposited on the sacrificial support; and optionally ii) eliminating the sacrificial support and recovering the silicon nanowires produced in step ii).