The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2020
Filed:
Jun. 20, 2016
Mitsubishi Electric Corporation, Chiyoda-ku, Tokyo, JP;
Kenji Hirano, Tokyo, JP;
Katsumi Ono, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Chiyoda-Ku, Tokyo, JP;
Abstract
A semiconductor element manufacturing method according to the invention is such that a focal spot form of a laser light is an ellipse, and irradiation with the laser light is concentrated on a projected division line of an interface between a semiconductor substrate and a fixing sheet, which is a vaporizing pressure confining sheet, and vaporizing pressure generated by the irradiation is confined between the semiconductor substrate and the fixing sheet, and caused to act as a bending force on the semiconductor substrate, and an initial crack is extended. Because of this, energy of the laser light can be reduced, heat damage to an element region of the semiconductor substrate and debris can be reduced, and a division face with good flatness can be stably obtained.