The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2020
Filed:
Feb. 01, 2019
Texas Instruments Incorporated, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A switch-node rising edge detection circuit is provided for a switched-mode DC/DC boost converter. A high-side gate-driver couples a gate of the high-side NMOS power transistor to either a first terminal of a bootstrap capacitor or the switch-node. The detection circuit includes an AND gate that receives an activation signal on a first input and provides a switching signal to the high-side gate-driver. A PMOS transistor is coupled in series with an inverter between the first terminal of the bootstrap capacitor and a second input of the AND gate. The inverter receives supply voltages from the first terminal of the bootstrap capacitor and the switch-node. The gate of the PMOS transistor receives the activation signal. An NMOS transistor is coupled between an output voltage and a node between the PMOS transistor and the inverter. A gate of the NMOS transistor is coupled to the bootstrap capacitor's first terminal.