The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2020

Filed:

Nov. 27, 2018
Applicant:

Lapis Semiconductor Co., Ltd., Kanagawa, JP;

Inventor:

Masayuki Otsuka, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H02M 3/07 (2006.01); G11C 16/30 (2006.01); H01L 27/06 (2006.01); G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
H02M 3/073 (2013.01); G11C 5/145 (2013.01); G11C 16/30 (2013.01); H01L 23/5223 (2013.01); H01L 27/0629 (2013.01); H02M 2003/075 (2013.01); H02M 2003/076 (2013.01);
Abstract

A semiconductor device including: a semiconductor substrate; at least one circuit block provided on a main surface of the semiconductor substrate and having a predetermined function; a wiring layer including plural metal layers that connect the circuit block; and plural capacitors including a first capacitor connected to the circuit block and that uses the plurality of metal layers, and a second capacitor that uses an active area disposed within the main surface of the semiconductor substrate, wherein at least one of the first capacitor and at least one of the second capacitor are stacked in a stacking direction of layers of the semiconductor.


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