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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10673207 B1

PDFFull Text
Date of Patent:
Jun. 02, 2020

Filed:

Jun. 02, 2016

Light-emitting semiconductor device, light-emitting semiconductor component and method for producing a light-emitting semiconductor device

Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Armin Dadgar, Berlin, DE;

André Strittmatter, Schwielowsee, DE;

Christoph Berger, Magdeburg, DE;

Assignee:

OSRAM OPTO SEMICONDUCTORS GMBH, Regensburg, DE;

Attorney:

MH2 Technology Law Group, LLP

Primary Examiner:

Tod T Van Roy

Int. Cl.
CPC ...
H01S 5/183 (2006.01); H01S 5/30 (2006.01); H01L 33/00 (2010.01); H01L 33/10 (2010.01); H01L 33/32 (2010.01); H01L 33/02 (2010.01); H01L 33/30 (2010.01); H01S 5/343 (2006.01); H01S 5/00 (2006.01); H01L 33/08 (2010.01); H01L 33/50 (2010.01); H01S 5/042 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18361 (2013.01); H01L 33/0045 (2013.01); H01L 33/025 (2013.01); H01L 33/10 (2013.01); H01L 33/105 (2013.01); H01L 33/32 (2013.01); H01S 5/18302 (2013.01); H01S 5/18386 (2013.01); H01S 5/3077 (2013.01); H01S 5/3095 (2013.01); H01L 33/08 (2013.01); H01L 33/305 (2013.01); H01L 33/502 (2013.01); H01S 5/005 (2013.01); H01S 5/042 (2013.01); H01S 5/305 (2013.01); H01S 5/3013 (2013.01); H01S 5/34333 (2013.01);
Abstract

The invention relates to, inter alia, a light-emitting semiconductor component comprising the following: —a first mirror (), —a first conductive layer (), —a light-emitting layer sequence () on a first conductive layer face facing away from the first mirror, and—a second conductive layer () on a light-emitting layer sequence face facing away from the first conductive layer, wherein—the first mirror, the first conductive layer, the light-emitting layer sequence, and the second conductive layer are based on a III-nitride compound semiconductor material, —the first mirror is electrically conductive, and—the first mirror is a periodic sequence of homoepitaxial materials with varying refractive indices.

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