The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2020
Filed:
Feb. 24, 2015
Applicant:
Nexeon Ltd., Oxfordshire, GB;
Inventors:
Young Tai Cho, Seoul, KR;
Yong Gil Choi, Daejeon, KR;
Seon Park, Daejeon, KR;
Young Jae Lee, Daejeon, KR;
Hee Young Seo, Daejeon, KR;
Jee Hye Park, Daejeon, KR;
Yong Eui Lee, Gyeonggi-do, KR;
Young Jin Hong, Daejeon, KR;
Assignee:
Nexeon Ltd., Oxfordshire, GB;
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/587 (2010.01); H01M 4/62 (2006.01); H01M 4/38 (2006.01); C01B 32/956 (2017.01); H01M 4/88 (2006.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/587 (2013.01); C01B 32/956 (2017.08); H01M 4/38 (2013.01); H01M 4/386 (2013.01); H01M 4/62 (2013.01); H01M 4/8885 (2013.01); H01M 4/622 (2013.01); H01M 2004/027 (2013.01);
Abstract
The present invention relates to a silicon anode active material capable of high capacity and high output, and a method for fabricating the same. A silicon anode active material according to an embodiment of the present invention includes a silicon core including silicon particles; and a double clamping layer having a silicon carbide layer on the silicon core and a silicon oxide layer between the silicon core and the silicon carbide layer.