The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2020
Filed:
Jun. 01, 2017
Applicant:
Schott Ag, Mainz, DE;
Inventors:
Miriam Kunze, Saulheim, DE;
Ulrich Peuchert, Bodenheim, DE;
Nikolaus Schultz, Essenheim, DE;
Thorsten Damm, Nieder-Olm, DE;
Clemens Ottermann, Hattersheim, DE;
Assignee:
SCHOTT AG, Mainz, DE;
Primary Examiner:
Int. Cl.
CPC ...
H01M 2/02 (2006.01); C03C 3/085 (2006.01); C03C 3/093 (2006.01); C03C 3/095 (2006.01); C03C 3/091 (2006.01); H01M 2/08 (2006.01); H01M 10/0525 (2010.01); H01M 10/0585 (2010.01); H01M 6/40 (2006.01); H01M 10/04 (2006.01); C23C 14/34 (2006.01); C23C 14/06 (2006.01); C03C 3/078 (2006.01); C03C 3/083 (2006.01); C03C 3/087 (2006.01); C03C 3/097 (2006.01);
U.S. Cl.
CPC ...
H01M 2/0207 (2013.01); C03C 3/078 (2013.01); C03C 3/083 (2013.01); C03C 3/085 (2013.01); C03C 3/087 (2013.01); C03C 3/091 (2013.01); C03C 3/093 (2013.01); C03C 3/095 (2013.01); C03C 3/097 (2013.01); C23C 14/0676 (2013.01); C23C 14/3414 (2013.01); H01M 2/028 (2013.01); H01M 2/0267 (2013.01); H01M 2/0292 (2013.01); H01M 2/08 (2013.01); H01M 6/40 (2013.01); H01M 10/0436 (2013.01); H01M 10/0525 (2013.01); H01M 10/0585 (2013.01); H01M 2002/0297 (2013.01);
Abstract
An electrical storage system is provided that has a thickness of less than 2 mm, where the system includes at least one sheet-type discrete element, the sheet-type discrete element exhibiting high resistance to an attack of alkali metals or alkali metal ions, in particular lithium, wherein the sheet-type discrete element has a low content of TiO, the TiOcontent preferably being less than 2 wt %, preferably less than 0.5 wt %, and preferably free of TiO.