The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2020
Filed:
Oct. 01, 2018
Applicant:
Lumileds Llc, San Jose, CA (US);
Inventors:
Jonathan J. Wierer, Pleasanton, CA (US);
John E. Epler, San Jose, CA (US);
Assignee:
Lumileds LLC, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/12 (2010.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/16 (2010.01); H01L 33/06 (2010.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02513 (2013.01); H01L 33/007 (2013.01); H01L 33/0025 (2013.01); H01L 33/0075 (2013.01); H01L 33/0079 (2013.01); H01L 33/06 (2013.01); H01L 33/16 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 21/0237 (2013.01); H01L 33/382 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A device comprising a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is disclosed. The device comprises a porous region. The device comprises a first layer disposed between the light emitting layer and the porous region. The device comprises a mask layer disposed between the porous region and the first layer. The device comprises a plurality of openings formed in the mask layer.