The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2020
Filed:
Dec. 15, 2017
Saphlux, Inc., Branford, CT (US);
Joo Won Choi, Woodbridge, CT (US);
Chen Chen, New Haven, CT (US);
Saphlux, Inc., Branford, CT (US);
Abstract
Aspects of the disclosure provide for mechanisms for fabricating light extraction structures for semiconductor devices (e.g., light-emitting devices). In accordance with some embodiments, a semiconductor device is provided. The semiconductor device may include: a first semiconductor layer including an epitaxial layer of a semiconductor material; a second semiconductor layer comprising an active layer; and a light-reflection layer configured to cause at least a portion of light produced by the active layer to emerge from the semiconductor device via a surface of the second semiconductor layer, wherein the light-reflection layer is positioned between the first semiconductor layer and the second semiconductor layer. In some embodiments, the semiconductor material includes gallium nitride. In some embodiments, the light-reflection layer includes a layer of gallium.