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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10672880 B1

PDFFull Text
Date of Patent:
Jun. 02, 2020

Filed:

Dec. 13, 2016

Thin film transistor array panel and conducting structure

Applicants:

Hong Fu Jin Precision Industry (Shenzhen) Co., Ltd., Shenzhen, CN;

Hon Hai Precision Industry Co., Ltd., New Taipei, TW;

Inventors:

Po-Li Shih, New Taipei, TW;

Yi-Chun Kao, New Taipei, TW;

Hsin-Hua Lin, New Taipei, TW;

Chih-Lung Lee, New Taipei, TW;

Wei-Chih Chang, New Taipei, TW;

I-Min Lu, New Taipei, TW;

Assignees:

HONG FU JIN PRECISION INDUSTRY (SheZhen) CO., LTD., Shenzhen, CN;

HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;

Attorney:

ScienBiziP, P.C.

Primary Examiner:

Moazzam Hossain

Assistant Examiner:

Stanetta D Isaac

Int. Cl.
CPC ...
H01L 29/45 (2006.01); H01L 27/12 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01); H01L 21/441 (2006.01); H01L 21/4763 (2006.01); H01L 21/477 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 21/443 (2006.01);
U.S. Cl.
CPC ...
H01L 29/45 (2013.01); H01L 21/441 (2013.01); H01L 21/443 (2013.01); H01L 21/477 (2013.01); H01L 21/47635 (2013.01); H01L 27/124 (2013.01); H01L 27/1218 (2013.01); H01L 27/1225 (2013.01); H01L 29/24 (2013.01); H01L 29/41733 (2013.01); H01L 29/458 (2013.01); H01L 29/66765 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78618 (2013.01); H01L 29/78669 (2013.01); H01L 29/78678 (2013.01);
Abstract

A conductive layer for a thin film transistor (TFT) array panel includes a multi-layered portion defining a source electrode and a drain electrode of a TFT device, and includes a first sub-layer, a second sub-layer, a third sub-layer, and at least one additional sub-layer. The third and the first sub-layers include indium and zinc oxide materials. An indium to zinc content ratio in the first sub-layer is greater than that in the third sub-layer. An indium to zinc content ratio in the additional sub-layer is formulated between that in the first and the third sub-layers. The content ratio differentiation between the first and the third sub-layers affects a lateral etch profile associated with a gap generated in the second conductive layer between the source and the drain electrodes, where the associated gap width in the third sub-layer is wider than that in the first sub-layer.

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