The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2020
Filed:
Jan. 24, 2019
Applicant:
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 23/528 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4238 (2013.01); H01L 23/528 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/417 (2013.01); H01L 29/66068 (2013.01); H01L 29/1608 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01);
Abstract
The silicon carbide semiconductor device includes a plurality of unit cells each having an MISFET structure and provided on a silicon carbide semiconductor substrate. A gate upper electrode disposed adjacent to the plurality of unit cells includes a gate pad and gate global wires. When viewed in plan, gate electrodes do not overlap with the gate pad.