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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10672869 B1

PDFFull Text
Expired
Date of Patent:
Jun. 02, 2020

Filed:

Jan. 23, 2019

Insulated-gate semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kawasaki, JP;

Inventor:

Shigemi Miyazawa, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki, JP;

Attorney:
Primary Examiner:

Farun Lu

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/49 (2006.01); H01F 38/12 (2006.01); H01L 27/02 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0696 (2013.01); H01L 29/1033 (2013.01); H01L 29/41708 (2013.01); H01L 29/4238 (2013.01); H01L 29/66333 (2013.01); H01L 29/7395 (2013.01); H01F 38/12 (2013.01); H01L 21/0217 (2013.01); H01L 21/02271 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/28035 (2013.01); H01L 21/28518 (2013.01); H01L 21/28525 (2013.01); H01L 21/31116 (2013.01); H01L 27/0255 (2013.01); H01L 29/4916 (2013.01);
Abstract

An insulated-gate semiconductor device has a multi-channel structure with a plurality of unit-cells arranged in parallel on a semiconductor chip, wherein a main-electrode causing a main current to flow in the semiconductor chip is defined so as to be divided into an inter-electrode portion metallurgically connected to the semiconductor chip between gate electrodes of each of the unit-cells and a covering portion being continuous with the inter-electrode portion and provided on the gate electrode of each of the unit-cells through an interlayer insulating film, wherein an area ratio of the inter-electrode portion to the covering portion of the main-electrode exposed to an opening cut in a protective film covering the semiconductor chip is larger than an area ratio of the inter-electrode portion to the covering portion of the main-electrode located under the protective film.

Find Patent Forward Citations

Miyazawa, Shigemi. (2020). Insulated-gate semiconductor device (U.S. Patent No. 10672869). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10672869

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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