The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2020
Filed:
May. 16, 2017
Applicant:
Sony Corporation, Tokyo, JP;
Inventors:
Hajime Kobayashi, Kanagawa, JP;
Yuichi Tokita, Kanagawa, JP;
Assignee:
SONY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/30 (2006.01); H01L 51/00 (2006.01); H01L 51/42 (2006.01); H01L 27/28 (2006.01); H01L 23/522 (2006.01); H01L 27/146 (2006.01); H01L 21/768 (2006.01); H01L 31/10 (2006.01); H01L 21/3205 (2006.01); H04N 5/369 (2011.01);
U.S. Cl.
CPC ...
H01L 27/307 (2013.01); H01L 21/3205 (2013.01); H01L 21/768 (2013.01); H01L 23/522 (2013.01); H01L 27/146 (2013.01); H01L 27/286 (2013.01); H01L 31/10 (2013.01); H01L 51/0026 (2013.01); H01L 51/4253 (2013.01); H04N 5/369 (2013.01); H01L 51/0046 (2013.01); H01L 51/0047 (2013.01); H01L 51/0055 (2013.01); H01L 51/0072 (2013.01); H01L 51/0074 (2013.01); H01L 51/0078 (2013.01);
Abstract
An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and provided between the first electrode and the second electrode, in which the photoelectric conversion layer has an exciton charge separation rate of 1×10sto 1×10sboth inclusive in a p-n junction surface formed by the p-type semiconductor and the n-type semiconductor.