The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2020
Filed:
Mar. 06, 2019
Toshiba Memory Corporation, Minato-ku, JP;
Shunsuke Kasashima, Yokkaichi, JP;
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Abstract
A semiconductor memory device according to an embodiment includes: a substrate; a plurality of first gate electrodes; a first semiconductor film facing the plurality of first gate electrodes; a first gate insulating film provided between the plurality of first gate electrodes and the first semiconductor film; a plurality of second gate electrodes that are further from the substrate than the plurality of first gate electrodes; a second semiconductor film facing the plurality of second gate electrodes; a second gate insulating film provided between the plurality of second gate electrodes and the second semiconductor film; a third gate electrode provided between the plurality of first gate electrodes and the plurality of second gate electrodes; a third semiconductor film facing the third gate electrode; and a third gate insulating film provided between the third gate electrode and the third semiconductor film, a width in a second direction of the third semiconductor film being larger than that of a one end of the second semiconductor film, and smaller than that of the other end of the first semiconductor film.