The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2020
Filed:
Mar. 17, 2015
Applicant:
Tufts University, Medford, MA (US);
Inventors:
Brad D. Gaynor, Newton, MA (US);
Soha Hassoun, Lexington, MA (US);
Assignee:
Tufts University, Medford, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/823431 (2013.01); H01L 29/0657 (2013.01); H01L 29/7853 (2013.01); H01L 29/7854 (2013.01); H01L 29/66795 (2013.01);
Abstract
A method for manufacturing a FinFET having a fin that has a fin body includes selecting a desired electrical performance parameter, selecting a base dimension of the fin, identifying a combination of fin-body doping and fin-geometry that causes the FinFET to have the desired electrical performance parameter, doping the fin body according to the identified fin-body doping, and fabricating the fin according to the fin-geometry.
Gaynor, Brad. (2020). Integrated circuit with multi-threshold bulk finfets (U.S. Patent No. 10672768). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10672768
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile