The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10672762 B1

Date of Patent:

Jun. 02, 2020

Filed:

Jun. 03, 2019

Semiconductor device and method of manufacturing semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Akio Yamano, Matsumoto, JP;

Aiko Takasaki, Matsumoto, JP;

Hiroaki Ichikawa, Azumino, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:

Primary Examiner:

William Coleman

Int. Cl.

CPC ...

H01L 27/07 (2006.01); H01L 23/522 (2006.01); H01L 23/00 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01); H01L 29/78 (2006.01); H01L 21/3205 (2006.01); H01L 29/417 (2006.01); H01L 21/768 (2006.01); H01L 27/06 (2006.01); H01L 21/8234 (2006.01);

U.S. Cl.

CPC ...

H01L 27/0716 (2013.01); H01L 21/3205 (2013.01); H01L 21/768 (2013.01); H01L 21/8234 (2013.01); H01L 23/522 (2013.01); H01L 24/49 (2013.01); H01L 27/06 (2013.01); H01L 29/417 (2013.01); H01L 29/66348 (2013.01); H01L 29/739 (2013.01); H01L 29/7397 (2013.01); H01L 29/78 (2013.01); H01L 29/8611 (2013.01); H01L 2224/4826 (2013.01); H01L 2224/4847 (2013.01); H01L 2224/49175 (2013.01); H01L 2224/49431 (2013.01);

Abstract

A semiconductor device is provided to reduce thermal fatigue in a junction portion of an external wiring to enhance long-term reliability, where the semiconductor device includes a semiconductor substrate, a transistor portion and a diode portion that are alternately arranged along a first direction parallel to a front surface of the semiconductor substrate inside the semiconductor substrate, a surface electrode that is provided above the transistor portion and the diode portion and that is electrically connected to the transistor portion and the diode portion, an external wiring that is joined to the surface electrode and that has a contact width with the surface electrode in the first direction, the contact width being larger than at least one of a width of the transistor portion in the first direction and a width of the diode portion in the first direction.

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