The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2020
Filed:
Oct. 04, 2018
Mitsubishi Electric Corporation, Tokyo, JP;
Takuya Yoshida, Fukuoka, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device includes: a semiconductor substrate having a cell region, a termination region located around the cell region, and a wiring region; an IGBT provided in the cell region; an insulating film provided on the semiconductor substrate in the wiring region; a gate electrode provided on the insulating film and connected to a gate of the IGBT; a p-type well layer provided on a surface side of the semiconductor substrate in the termination region; and a diode provided in the wiring region, wherein the diode includes a the p-type base layer provided on the surface side of the semiconductor substrate and an n-type cathode layer provided on a reverse side of the semiconductor substrate, the p-type base layer is provided in common to the wiring region and the cell region and has a lower impurity concentration and a smaller depth than the p-type well layer.