The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2020

Filed:

Apr. 04, 2019
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventor:

Yoichiro Kurita, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/18 (2006.01); H01L 23/538 (2006.01); H01L 25/00 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 25/03 (2006.01); H01L 25/065 (2006.01); H01L 25/10 (2006.01); H01L 23/522 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 25/18 (2013.01); H01L 21/563 (2013.01); H01L 23/3128 (2013.01); H01L 23/3135 (2013.01); H01L 23/3157 (2013.01); H01L 23/49816 (2013.01); H01L 23/5226 (2013.01); H01L 23/5384 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01); H01L 24/17 (2013.01); H01L 25/03 (2013.01); H01L 25/0657 (2013.01); H01L 25/105 (2013.01); H01L 25/50 (2013.01); H01L 23/481 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 2221/68345 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73203 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73265 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/0652 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06555 (2013.01); H01L 2225/06572 (2013.01); H01L 2225/06586 (2013.01); H01L 2225/06593 (2013.01); H01L 2225/1005 (2013.01); H01L 2225/1023 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/00011 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/09701 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/14 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/15331 (2013.01); H01L 2924/181 (2013.01); H01L 2924/18161 (2013.01); H01L 2924/19107 (2013.01); H01L 2924/3511 (2013.01);
Abstract

The semiconductor devicecomprises a first semiconductor elementprovided on a face on one side of a flat plate shaped interconnect component, an insulating resincovering a face of a side where the first semiconductor elementof the interconnect componentis provided and a side face of the first semiconductor element, and a second semiconductor elementprovided on a face on the other side of the interconnect component. The interconnect componenthas a constitution where an interconnect layer, a silicon layerand an insulating filmare sequentially formed. The interconnect layerhas a constitution where the interconnect layerhas a flat plate shaped insulating component and a conductive component extending through the insulating component. The first semiconductor elementis electrically connected with the second semiconductor elementthrough the conductive component.


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