The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2020
Filed:
Feb. 27, 2018
Applicant:
Ablic Inc., Chiba-shi, Chiba, JP;
Inventor:
Yoshitaka Kimura, Chiba, JP;
Assignee:
ABLIC INC., Chiba, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/525 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5258 (2013.01); H01L 21/76894 (2013.01); H01L 23/5226 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01);
Abstract
A semiconductor device includes a multilayer wiring structure on a substrate. The multilayer wiring structure includes: a top wiring; a fuse element, which is located on a lower layer-side of the top wiring, and is made of metal having a melting point that is higher than that of the top wiring; and a lower-layer wiring, which is connected to each of ends of the fuse element. Provided is a semiconductor device in which fuse elements made of the high-melting point metal are arranged at high density.