The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2020
Filed:
Aug. 08, 2019
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Infineon Technologies AG, Neubiderg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/288 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/2885 (2013.01); H01L 21/7682 (2013.01); H01L 21/76834 (2013.01); H01L 21/76841 (2013.01); H01L 21/76898 (2013.01); H01L 23/528 (2013.01); H01L 23/53228 (2013.01); H01L 23/53295 (2013.01); H01L 29/4175 (2013.01); H01L 29/7816 (2013.01); H01L 29/7835 (2013.01); H01L 21/76846 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 29/063 (2013.01); H01L 29/0696 (2013.01); H01L 29/1045 (2013.01); H01L 29/404 (2013.01);
Abstract
A method of forming a conductive through substrate via includes forming an opening in a first surface of a semiconductor substrate comprising a LDMOS transistor structure in the first surface, forming a first conductive layer in a first portion of the opening in the semiconductor substrate using first deposition parameters such that the first conductive layer fills the opening in the first portion, and forming a second conductive layer on the first conductive layer in a second portion of the opening using second deposition parameters such that the second conductive layer bounds a gap in the second portion.