The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2020

Filed:

Jul. 11, 2018
Applicants:

Tokyo Electron Limited, Tokyo, JP;

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Vinh Luong, Guilderland, NY (US);

Isabel Cristina Chu, Melrose, NY (US);

Ashim Dutta, Albany, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/32136 (2013.01); H01J 37/32449 (2013.01);
Abstract

Embodiments of systems and methods for patterning features in tantalum nitride (TaN) are described. In an embodiment, a method may include receiving a substrate comprising a TaN layer. The method may also include etching the substrate to expose at least a portion of the TaN layer. Additionally, the method may include performing a passivation process to reduce lateral etching of the TaN layer. The method may further include etching the TaN layer to form a feature therein, wherein the passivation process is controlled to meet one or more target passivation objectives.


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