The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2020

Filed:

Nov. 03, 2017
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Hefei Xinsheng Optoelectronics Technology Co., Ltd., Hefei, CN;

Inventors:

Xianrui Qian, Beijing, CN;

Bo Li, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 19/00 (2006.01); G11C 19/28 (2006.01); G09G 3/20 (2006.01); G09G 3/36 (2006.01);
U.S. Cl.
CPC ...
G11C 19/28 (2013.01); G09G 3/20 (2013.01); G09G 3/3677 (2013.01); G09G 2300/0408 (2013.01); G09G 2310/0267 (2013.01); G09G 2310/0286 (2013.01); G09G 2310/08 (2013.01); G09G 2320/043 (2013.01);
Abstract

A shift register, an array substrate and a display device in the field of display technology are provided in the present disclosure. In the shift register, the gate electrode of the first transistor is connected to a second node, one of the source electrode and the drain electrode is connected to a first clock signal line, and the other one is connected to the first node. The gate electrode of the second transistor is connected to the second node, one of the source electrode and the drain electrode is connected to the second node, and the other one is connected to the first clock signal line. The charging circuitry is configured to set the second node to an effective level when a second clock signal line is at an effective level. The memory circuitry is configured to store the threshold voltage of the second transistor and compensate the threshold voltage of the first transistor with the stored threshold voltage.


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