The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2020
Filed:
Sep. 03, 2018
Toshiba Memory Corporation, Tokyo, JP;
Takaaki Nakazato, Yokohama Kanagawa, JP;
Atsushi Kawasumi, Kawasaki Kanagawa, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
A semiconductor memory device includes a first conductor that extends in a first direction, a second conductor that extends in a second direction, a first memory cell connected between the first conductor and the second conductor and including a phase change element, and a control circuit. The control circuit applies a first voltage across the first memory cell via the first conductor and the second conductor during a first period of time of a write operation targeted to the first memory cell, and a second voltage across the first memory cell via the first conductor and the second conductor during a second period of time of the write operation after the first period. The first voltage is an overshoot voltage. The second voltage is a preset voltage having a magnitude sufficient to place the phase change element in a molten state during the second period of time.