The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2020

Filed:

Aug. 01, 2018
Applicant:

Furukawa Electric Co., Ltd., Tokyo, JP;

Inventors:

Masakazu Miura, Tokyo, JP;

Jun Miyokawa, Tokyo, JP;

Kazuki Yamaoka, Tokyo, JP;

Hajime Mori, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/42 (2006.01); G02B 6/26 (2006.01); H01S 5/022 (2006.01); H01S 5/0683 (2006.01); H01S 5/024 (2006.01);
U.S. Cl.
CPC ...
G02B 6/4295 (2013.01); G02B 6/262 (2013.01); G02B 6/4296 (2013.01); H01S 5/022 (2013.01); H01S 5/02252 (2013.01); H01S 5/02284 (2013.01); G02B 6/4286 (2013.01); H01S 5/02476 (2013.01); H01S 5/0683 (2013.01);
Abstract

A non-plated region is formed in a certain range from an end of a submount. The non-plated region is a portion where a plating layer is not provided, and thus a substrate of the submount is exposed. An intermediate layer is formed on the plating layer. Furthermore, a plating layer is formed on the intermediate layer. A semiconductor laser is formed on the plating layer. The position of an end of the semiconductor laser substantially coincides with the position of an end of the plating layer (the intermediate layer). That is, even in a case where there is a deviation between an end face of the intermediate layer and an end face of the semiconductor laser, the amount of this deviation is sufficiently smaller than the amount by which the intermediate layer is set back from an end face of the submount.


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