The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2020
Filed:
Nov. 04, 2019
Applicant:
Finisar Corporation, Sunnyvale, CA (US);
Inventors:
Henry Meyer Daghighian, Redwood City, CA (US);
Steven C. Bird, San Jose, CA (US);
Assignee:
II-VI Delaware Inc., Wilmington, DE (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05K 1/02 (2006.01); H05K 1/03 (2006.01); H05K 1/11 (2006.01); G02B 6/132 (2006.01); G02B 6/124 (2006.01); G02B 6/122 (2006.01); G02B 6/12 (2006.01); G02B 6/42 (2006.01); H05K 3/46 (2006.01); G02B 6/136 (2006.01); H01P 3/08 (2006.01); H05K 1/09 (2006.01); H05K 3/32 (2006.01);
U.S. Cl.
CPC ...
H05K 1/0274 (2013.01); G02B 6/122 (2013.01); G02B 6/124 (2013.01); G02B 6/12007 (2013.01); G02B 6/1221 (2013.01); G02B 6/132 (2013.01); G02B 6/136 (2013.01); G02B 6/42 (2013.01); H01P 3/081 (2013.01); H05K 1/0201 (2013.01); H05K 1/0207 (2013.01); H05K 1/028 (2013.01); H05K 1/032 (2013.01); H05K 1/09 (2013.01); H05K 1/115 (2013.01); H05K 3/4688 (2013.01); G02B 6/4214 (2013.01); G02B 6/4269 (2013.01); G02B 2006/121 (2013.01); G02B 2006/12035 (2013.01); G02B 2006/12104 (2013.01); G02B 2006/12107 (2013.01); G02B 2006/12164 (2013.01); H05K 1/024 (2013.01); H05K 1/0209 (2013.01); H05K 3/323 (2013.01); H05K 3/4605 (2013.01); H05K 3/4611 (2013.01); H05K 3/4614 (2013.01); H05K 3/4638 (2013.01); H05K 2201/0154 (2013.01); H05K 2201/09918 (2013.01);
Abstract
An optical waveguide is disclosed. In a disclosed embodiment, the optical waveguide includes a first aluminum nitride (AlN) thin film disposed on a layer of high-frequency polymer. A second AlN thin film is embedded in the first AlN thin film. In disclosed embodiments, the nitrogen concentration level of the first AlN thin film is different than the concentration level of the second AlN thin film.