The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2020
Filed:
Apr. 18, 2019
Hrl Laboratories, Llc, Malibu, CA (US);
Albert E. Cosand, Agoura Hills, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
A circuit biases an input transistor by using a voltage on a reference transistor having open gate connection and operating at the same current density as the input transistor to null current leakage at the gate of the input transistor. The input transistor is biased based on the voltage on the zero-gate-current reference transistor. The bias condition for the input transistor to operate at a zero gate current is determined by leaving the gate terminal of the reference transistor open-circuited, thus zero gate current, forcing a desired current through the reference transistor, and measuring a drain-source voltage of the reference transistor. When the input terminal of the input transistor has an ancillary circuitry that may contribute gate leakage current, the same ancillary circuitry can be coupled to the gate of the reference transistor.