The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2020

Filed:

Mar. 26, 2019
Applicants:

Nikolay Ledentsov, Berlin, DE;

Vitaly Shchukin, Berlin, DE;

Inventors:

Nikolay Ledentsov, Berlin, DE;

Vitaly Shchukin, Berlin, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01); H01S 5/10 (2006.01); H01S 5/22 (2006.01); H01S 5/20 (2006.01); H01S 5/02 (2006.01); H01S 5/42 (2006.01); H01S 5/026 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18302 (2013.01); H01S 5/0215 (2013.01); H01S 5/1021 (2013.01); H01S 5/1035 (2013.01); H01S 5/1833 (2013.01); H01S 5/18311 (2013.01); H01S 5/18313 (2013.01); H01S 5/18333 (2013.01); H01S 5/18352 (2013.01); H01S 5/18361 (2013.01); H01S 5/18377 (2013.01); H01S 5/205 (2013.01); H01S 5/222 (2013.01); H01S 5/026 (2013.01); H01S 5/18369 (2013.01); H01S 5/423 (2013.01); H01S 2301/166 (2013.01); H01S 2301/176 (2013.01);
Abstract

An optoelectronic device employs a surface-trapped TM-polarized optical mode existing at a boundary between a distributed Bragg reflector (DBR) and a homogeneous medium, dielectric or air. The device contains a resonant optical cavity surrounded by two DBRs, and an additional DBR section on top supporting the surface-trapped mode. Selective chemical transformation, like selective oxidation, etching or alloy composition intermixing form a central core and a periphery having different vertical profiles of the refractive index. Therefore, the longitudinal VCSEL mode in the core is non-orthogonal to the surface-trapped mode in the periphery, and the two modes can be transformed into each other. Such transformation allows fabrication of a number of optoelectronic devices and systems like a single transverse mode VCSEL, an integrated optical circuit operating as an optical amplifier, an integrated optical circuit combining a VCSEL and a resonant cavity photodetector, etc.


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