The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2020
Filed:
Nov. 09, 2016
Wake Forest University, Winston-Salem, NC (US);
University of Utah Research Foundation, Salt Lake City, UT (US);
Yaochuan Mei, Winston-Salem, NC (US);
Oana Diana Jurchescu, Winston-Salem, NC (US);
Zeev Valentine Vardeny, Salt Lake City, UT (US);
Chuang Zhang, Salt Lake City, UT (US);
WAKE FOREST UNIVERSITY, Winston-Salem, NC (US);
UNIVERSITY OF UTAH RESEARCH FOUNDATION, Salt Lake City, UT (US);
Abstract
In one aspect, field effect transistors are described herein employing channels formed of hybrid halide perovskite materials. For example, a field effect transistor comprises a source terminal, a drain terminal and a gate terminal wherein a dielectric layer is positioned between the gate terminal and the source and drain terminals. A channel layer is in electrical communication with the source terminal and the drain terminal, the channel layer comprising an organic-inorganic perovskite in contact with a polymeric surface of the dielectric layer.