The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2020

Filed:

Nov. 17, 2017
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Britta Goeoetz, Regensburg, DE;

Alexander Behres, Pfatter, DE;

Darshan Kundaliya, Beverly, MA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/50 (2010.01); H01L 33/00 (2010.01); H01L 33/08 (2010.01);
U.S. Cl.
CPC ...
H01L 33/502 (2013.01); H01L 33/0075 (2013.01); H01L 33/505 (2013.01); H01L 33/08 (2013.01); H01L 33/508 (2013.01); H01L 2933/0041 (2013.01);
Abstract

A method for producing at least one optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment, the method includes providing a semiconductor layer sequence comprising a first semiconductor material configured to emit a first radiation and applying a conversion element at least partially on the semiconductor layer sequence via a cold method, wherein the conversion element comprises a second semiconductor material, and wherein the second semiconductor material is configured to convert the first radiation into a second radiation.


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