The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2020

Filed:

Feb. 21, 2017
Applicant:

Stanley Electric Co., Ltd., Tokyo, JP;

Inventor:

Toru Kinoshita, Yamaguchi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/32 (2010.01); H01L 33/16 (2010.01); H01L 21/205 (2006.01); H01L 33/06 (2010.01); H01L 33/00 (2010.01); H01L 33/02 (2010.01);
U.S. Cl.
CPC ...
H01L 33/38 (2013.01); H01L 21/205 (2013.01); H01L 33/06 (2013.01); H01L 33/16 (2013.01); H01L 33/32 (2013.01); H01L 33/0079 (2013.01); H01L 33/02 (2013.01);
Abstract

A vertical ultraviolet light-emitting diode has, on an aluminum polar plane of an n-type AlN single crystal substrate, a layer represented by n-type AlGaN (wherein X is a rational number satisfying 0.5≤X≤1.0), an active layer, a layer represented by p-type AlGaN (wherein Y is a rational number satisfying 0.5≤Y≤1.0) and a p-type GaN layer in this order and which is equipped with a p-electrode formed on the p-type GaN layer and an n-electrode partially provided on a plane on the opposite side to the aluminum polar plane of the n-type AlN single crystal substrate, preferably an n-electrode formed by providing at least one opening functioning as a light extraction window, wherein the shortest distance between the n-electrode and an arbitrary point in a portion where the n-electrode is not provided, is not more than 400 μm.


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