The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2020
Filed:
Dec. 15, 2017
Saphlux, Inc., Branford, CT (US);
Saphlux, Inc., Branford, CT (US);
Abstract
Aspects of the disclosure provide for mechanisms for forming air voids for semiconductor fabrication. In accordance with some embodiments, a method for forming air voids may include forming a first semiconductor layer including a first group III material and a second group III material on a substrate; forming a plurality of air voids in the first semiconductor layer by removing at least a portion of the second group III material from the first semiconductor layer; and forming a second semiconductor layer on the first semiconductor layer. The second semiconductor layer may include an epitaxial layer of a group III-V material. In some embodiments, the first group III material and the second group III material may be gallium and indium, respectively.