The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2020
Filed:
Mar. 03, 2016
Applicant:
Lyten, Inc., Sunnyvale, CA (US);
Inventors:
Assignee:
LytEn, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 31/112 (2006.01); H01L 31/028 (2006.01); H01L 31/0203 (2014.01); H01L 31/0352 (2006.01); H01L 23/00 (2006.01); H01L 21/683 (2006.01); H01L 29/778 (2006.01); H01L 51/05 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78636 (2013.01); H01L 21/6835 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/24 (2013.01); H01L 29/1606 (2013.01); H01L 29/66045 (2013.01); H01L 29/66742 (2013.01); H01L 29/778 (2013.01); H01L 29/78603 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01); H01L 31/0203 (2013.01); H01L 31/028 (2013.01); H01L 31/035209 (2013.01); H01L 31/112 (2013.01); H01L 51/0558 (2013.01); H01L 27/0694 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/24226 (2013.01); H01L 2224/2518 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/10329 (2013.01); H01L 2924/13072 (2013.01); H01L 2924/14 (2013.01); H01L 2924/1433 (2013.01); H01L 2924/15174 (2013.01); H01L 2924/15311 (2013.01); Y02E 10/547 (2013.01);
Abstract
A method and apparatus wherein the method comprises: providing at least one electrode within a semiconductor layer wherein the semiconductor layer is provided on a first side of a wafer; thinning the wafer to produce a thinned wafer; providing graphene on a second side of the thinned wafer; attaching the semiconductor layer to an electrical interface on the first side of the thinned wafer; and providing at least one electrical connection from the graphene to the electrical interface so as to form a transistor comprising the at least one electrode and the graphene.