Manufacturing method of flexible tft backplane and flexible tft backplane

Abstract

The invention provides a manufacturing method of flexible TFT backplane. The method uses a mixed solution of carbon nanotubes and metal oxide to prepare active layer () of TFT (T), and the temperature is lower and will not cause damage to the flexible base substrate (), and the material of flexible base substrate () is not restricted. The use of vacuum equipment is reduced to save production cost. The carbon nanotubes have excellent conductivity, and the mixture with metal oxide as the active layer () of the TFT can improve the electron mobility. The buffer layer () has a silicon nitride film () as the lowest layer contacting the flexible base substrate (), making good adhesion between buffer layer () and flexible base substrate (). The topmost layer of the buffer layer () is an aluminum oxide film (), which enables the buffer layer () to resist to water.