The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2020
Filed:
Jul. 23, 2018
Mitsubishi Electric Corporation, Tokyo, JP;
Takaaki Tominaga, Tokyo, JP;
Yasushi Takaki, Tokyo, JP;
Yoichiro Tarui, Tokyo, JP;
Shiro Hino, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate having an n-type drift layer, and a p-type well region formed in a surface portion of a part of the drift layer, an insulating film provided on the well region, a gate built-in resistor formed of polysilicon in contact with a surface of the insulating film, an interlayer insulating film formed on the gate built-in resistor, a gate contact wire that is connected to a gate pad and formed on the interlayer insulating film, a gate wire provided on the interlayer insulating layer so as to be apart from the gate contact wire, a first gate contact for electrically connecting the gate contact wire and the gate built-in resistor, and a second gate contact for electrically connecting the gate wire and the gate built-in resistor.