The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2020
Filed:
Sep. 05, 2018
Applicant:
Monolithic Power Systems Co., Ltd., San Jose, CA (US);
Inventors:
Eric Braun, Mountain View, CA (US);
Joel McGregor, Kirkland, WA (US);
Jeesung Jung, San Ramon, CA (US);
Assignee:
Monolithic Power Systems, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 21/823871 (2013.01); H01L 29/086 (2013.01); H01L 29/0865 (2013.01); H01L 29/0878 (2013.01); H01L 29/0882 (2013.01); H01L 29/402 (2013.01); H01L 29/66681 (2013.01);
Abstract
An LDMOS device with a field plate contact having a field plate contact metal layer being positioned above the field plate contact. The field plate contact metal layer has a sub-maximum size satisfied for the electrical connection between the field plate contact and an external applying voltage. This sub-maximum size is prescribed by the physical limitation of the LDMOS device. The field plate contact metal layer extends a sub-maximum length from one edge toward to the other edge of the field plate contact.