The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2020
Filed:
Apr. 13, 2018
Applicant:
Raytheon Systems Limited, Glenrothes, GB;
Inventors:
David Trann Clark, Glenrothes, GB;
Ewan Philip Ramsay, Dundee, GB;
Assignee:
Raytheon Systems Limited, Glenrothes, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/735 (2006.01); H01L 29/16 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/735 (2013.01); H01L 21/046 (2013.01); H01L 21/26513 (2013.01); H01L 29/107 (2013.01); H01L 29/1008 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/6625 (2013.01);
Abstract
The lateral bipolar junction transistor has a silicon carbide layer, the silicon carbide layer comprises a base region with a first conductivity type, a collector region with a second conductivity type and an emitter region with a second conductivity type. The collector region and the emitter region are within the base region, and the base region, collector region and emitter region are all arranged along an upper surface of the silicon carbide layer.