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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10665702 B1

PDFFull Text
Date of Patent:
May. 26, 2020

Filed:

Oct. 04, 2018

Vertical bipolar transistors

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Myung Gil Kang, Suwon-si, KR;

Ill Seo Kang, Eumseong-gun, KR;

Yong Hee Park, Hwaseong-si, KR;

Sang Hoon Baek, Seoul, KR;

Keon Yong Cheon, Yongin-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Tan N Tran

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/732 (2006.01); H01L 27/082 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 21/308 (2006.01); H01L 29/10 (2006.01); H01L 27/06 (2006.01); H01L 21/8249 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/732 (2013.01); H01L 21/28088 (2013.01); H01L 21/3086 (2013.01); H01L 21/8249 (2013.01); H01L 27/0623 (2013.01); H01L 27/0826 (2013.01); H01L 29/0646 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/0843 (2013.01); H01L 29/1004 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 21/823885 (2013.01);
Abstract

A vertical bipolar transistor including a substrate including a first well of a first conductivity type and a second well of a second conductivity type different from the first conductivity type, the first well adjoining the second well, a first fin extending, from the first well, a second fin extending from the first well, a third fin extending from the second well, a first conductive region on the first fin, having the second conductivity type and configured to serve as an emitter of the vertical bipolar transistor, a second conductive region on the second fin, having the first conductivity type, and configured to serve as a base of the vertical bipolar transistor, and a third conductive region on the third fin, having the second conductivity type, and configured to serve as a collector of the vertical bipolar transistor may be provided.

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