The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2020
Filed:
Aug. 14, 2018
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Anupam Dutta, Kolkata, IN;
John J. Ellis-Monaghan, Grand Isle, VT (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0619 (2013.01); H01L 29/66484 (2013.01); H01L 29/7832 (2013.01); H01L 29/7841 (2013.01); H01L 29/0653 (2013.01);
Abstract
The present disclosure relates to a semiconductor device, and more particularly, to a junctionless/accumulation mode transistor with dynamic control and method of manufacturing. The circuit includes a channel region and a threshold voltage control on at least one side of the channel region, the threshold voltage control being configured to provide dynamic control of a voltage threshold, leakage current, and breakdown voltage of the circuit, wherein the threshold voltage control is a different dopant or material of a source region and a drain region of the circuit.