The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2020

Filed:

Feb. 22, 2017
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Utz Herwig Hahn, Zurich, CH;

Marc Seifried, Zurich, CH;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 6/122 (2006.01); H01L 27/12 (2006.01); H01S 5/02 (2006.01); H01L 29/08 (2006.01); H01L 29/04 (2006.01); H01L 29/737 (2006.01); H01S 5/10 (2006.01); H01S 5/323 (2006.01); H01S 5/223 (2006.01); H01S 5/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1222 (2013.01); H01L 27/1203 (2013.01); H01L 27/1296 (2013.01); H01L 29/04 (2013.01); H01L 29/0817 (2013.01); H01L 29/0821 (2013.01); H01L 29/7371 (2013.01); H01S 5/021 (2013.01); H01S 5/1032 (2013.01); H01S 5/0215 (2013.01); H01S 5/0218 (2013.01); H01S 5/12 (2013.01); H01S 5/223 (2013.01); H01S 5/323 (2013.01);
Abstract

The present invention is notably directed to an electro-optical device. The latter comprises a layer structure with: a silicon substrate; a buried oxide layer over the silicon substrate; a tapered silicon waveguide core over the buried oxide layer, the silicon waveguide core cladded by a first cladding structure; a bonding layer over the first cladding structure; and a stack of III-V semiconductor gain materials on the bonding layer, the stack of III-V semiconductor gain materials cladded by a second cladding structure. The layer structure is configured to optically couple radiation between the stack of III-V semiconductor gain materials and the tapered silicon waveguide core. The first cladding structure comprises a material having: a refractive index that is larger than 1.54 for said radiation; and a bandgap, which, in energy units, is larger than an average energy of said radiation.


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